Flash lamp annealing

Thermal treatments (Growth & Synthesis)

The flash lamp furnace allows processing materials without submitting them to long temperature ramping time, shortening dramatically thermal processes. The infrared lamp furnaces can reach temperature up to 1450°C and for duration up to 1 hour at 1200°C. Some high temperature systems can run process at 2000°C for 1 hour. The temperature ramp rate may reach up to 100°C/s, with faster system allowing to heat the sample from both side.

The process may be performed in controlled gaseous atmosphere and with a pressure ranging between atmospheric pressure down to 10-6 Torr.

 

The main applications of the process are for:

  • Rapid Thermal Annealing (RTA)
  • Implant annealing
  • Contact annealing (III-V and SiC)
  • Rapid Thermal Oxidation (RTO)
  • Rapid Thermal Nitridation (RTN)
  • Annealing of piezoelectric and pyroelectric materials
  • Getter activation
  • Rapid Thermal Evaporation (RTE)
  • Selenization (CIGS solar cells)
  • Sol-gel densification and crystallization
  • Etc.

                                                                            

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