Flash lamp annealing

Growth & Synthesis (Thermal treatments)

The flash lamp furnace allows processing materials without submitting them to long temperature ramping time, shortening dramatically thermal processes. The infrared lamp furnaces can reach temperature up to 1450°C and for duration up to 1 hour at 1200°C. Some high temperature systems can run process at 2000°C for 1 hour. The temperature ramp rate may reach up to 100°C/s, with faster system allowing to heat the sample from both side.

The process may be performed in controlled gaseous atmosphere and with a pressure ranging between atmospheric pressure down to 10-6 Torr.

 

The main applications of the process are for:

  • Rapid Thermal Annealing (RTA)
  • Implant annealing
  • Contact annealing (III-V and SiC)
  • Rapid Thermal Oxidation (RTO)
  • Rapid Thermal Nitridation (RTN)
  • Annealing of piezoelectric and pyroelectric materials
  • Getter activation
  • Rapid Thermal Evaporation (RTE)
  • Selenization (CIGS solar cells)
  • Sol-gel densification and crystallization
  • Etc.

                                                                            

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          provided at NFFA-Europe laboratories by:
LUND + MAX IV
Sweden
INESC-MN
Portugal
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          provided by:
EURONANOLAB
France