62330a79ff8d760b95422b66 |
SEM-EDX |
CNR-Istituto Officina Dei Materiali (Trieste) |
na |
Scanning electron microscopy with energy dispersive X-ray microanalysis |
High brightness field-emission gun (FEG) |
Beam voltage: 0.02- 30kV
Beam current: Configuration 1: 4pA -20nA/Configuration 2:12 pA – 100nA |
High efficiency in-lens detector
Everhart-Thornley Secondary Electron Detector
Cap mounted AsB detector
CCD-camera with IR illumination |
1.0 nm at 15kV
1.9 nm at 1kV |
5-Axes Motorised Eucentric Specimen Stage: X = 130 mm, Y = 130 mm, Z = 50 mm, T = -3 - +70°, R = 360° (continuous)
6-Axes Eucentric Stage: X = 100 mm, Y = 100 mm, Z = 42 mm, Z’ = 13 mm, T = -4 to 70°, R = 360° (continuous) |
STEM detector (scanning transmission electron microscopy)
SDD EDX system for chemical micro-analysis with 10 mm2 active area, energy resolution for Mn Kα: 129 eV or better, peak shift and resolution change <1 eV |
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na |
1 |
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62330aa1ff8d760b95422b67 |
FIB-SEM |
CNR-Istituto Officina Dei Materiali (Trieste) |
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Focused Ion Beam-Scanning Electron Microscopy |
Ga focused ion beam (FIB)
High brightness field-emission gun (FEG) |
Beam voltage: 30 KeV (FIB); 0.7-30kV
Current voltage: 1pA – 500nA (FIB); 10pA - 5nA with high stability (0.2%/h) |
Everhart Thornley
In-lens secondary electron |
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Pattern generator for electron beam and Ga ion beam lithography
EDX system for chemical micro-analysis with 10 mm2 active area, energy resolution Mn Kα: 150 eV or better |
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62331f71ff8d760b95422b8b |
Hitachi H5500 High resolution SEM |
Laboratoire d'électronique des technologies de l'information |
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SEM |
Cold Field Emission Gun |
High tension from 0.5 to 30 kV |
Secondary and backscattered electron detectors
STEM detector |
0.4 nm at 30 kV
1.6 nm at 1 keV |
Inlens pole piece |
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Small samples (5mm) |
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62335de3fe8f7ffef201b149 |
SEM @ DESY NanoLab |
Stiftung Deutsches Elektronen-Synchrotron + PETRA III |
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Imaging of surfaces in reflection mode, in scanning mode and scanning transmission microscopy (STEM), elemental analysis by EDX (point and line analysis, mappings) |
High resolution field emission instrument Nova Nano SEM 450 (FEI) |
Acceleration Voltage: 200 V - 30 kV
Deceleration mode
Current up to 200 nA
EDX: 127 eV @ MnKα |
SE Everhart-Thornley detector (ETD)
Low vacuum BE detector
High resolution through-lens detector tunable for SE and BE mode
High resolution STEM detector for analysis of membranes and thin films in transmission
X-Max 150 EDS silicon drift detector for elemental analysis, energy resolution 127 eV @ MnKα (Oxford)
IR-CCD camera to track the sample position |
Lateral resolution:
1.0 nm at 15 kV
1.4 nm at 1 kV
0.8 nm at 30 kV (STEM) |
Possible translation of sample stage in x/y: 110 x 110 mm
Navigation and pattering software
Sample tilt -15° to +74° |
Gas injection system for electron beam induced deposition (EBID) with Pt precursor material to write Pt based markers on sample surfaces, as e.g., markers for Nanopositioning to be developed within Joint research action 5 "Advanced Nano-object Transfer and Positioning" |
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All materials
Sample sizes 100 mm x 100 mm x 50 mm (length x width x height)
Ambient temperature |
10-5 mbar typical operating pressure |
Cross-section thickness measurement software |
Plasma cleaning |
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623362d1fe8f7ffef201b408 |
SEM – FEI Quanta 650 FEG ESEM |
CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY |
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High resolution surface imaging, low vacuum imaging, environmental SEM capabilities and chemical composition analysis |
Schottky field emission gun |
Beam voltage: 200V to 30kV
Beam current: 1.6pA to 200nA |
Secondary electrons (SE)
Backscattered electrons (BSE)
Transmitted electrons (STEM)
Energy Dispersive X-ray Spectroscopy (EDX) |
0.8 nm @ 30kV (STEM)
1.0 nm @ 30kV (SE)
3.0 nm @ 1kV (SE) |
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Up to 8” diameter flat samples |
High vacuum: 10-4Pa
Low vacuum: 10Pa – 130Pa
Environmental mode: 10Pa – 4000Pa |
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Environmental mode: sample cooling (down to -25ºC), heating (up to 1000ºC) and wet samples imaging |
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62336303fe8f7ffef201b409 |
SEM – FEI Magellan 400L XHRSEM |
CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY |
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Extreme high resolution surface imaging |
Schottky field emission gun with monochromator (UniColore electron source) |
Beam voltage: 50V to 30kV
Beam current: 1.6pA to 26nA |
Secondary electrons (SE)
Backscattered electrons (BSE)
Transmitted electrons (STEM) |
0.8 nm @ 30kV (STEM)
0.8 nm @ 15kV (SE)
1.5 nm @ 200V (SE) |
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In-situ plasma cleaner |
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Up to 4” diameter flat samples |
High vacuum: 10-4Pa |
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High resolution imaging of insulating samples (no coating needed) |
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6234665cfe8f7ffef201bdd1 |
SEM - LEO 1560 |
LUNDS UNIVERSITET + MAX IV |
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SEM inspection |
Standard Schottky type filament |
Beam voltage: 0.5-30kV |
ET and through the lens type detectors |
1.3nm at 20kV |
150mm travel of stage |
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From stubs up to 6” wafers |
High Vacuum only: E-6 mbar |
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62346681fe8f7ffef201bdd2 |
Zeiss Gemini SEM 500 |
LUNDS UNIVERSITET + MAX IV |
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Surface imaging and elemental analysis |
Schottky field emission gun |
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Secondary electron and backscatter electron detectors, plus EDS detector |
A few nm for imaging, a few um for EDS, depends on sample |
x, y, z, rotation and tilt of sample |
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Solid sample, max 2" wafer or smaller pieces
Other SEMs available for larger samples |
High Vacuum only: E-6 mbar |
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No |
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623466b7fe8f7ffef201bdd3 |
JEOL JSM-6700F SEM |
LUNDS UNIVERSITET + MAX IV |
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Imaging and analysis at the sub-micron-level via SEM and EDXS |
Field emission gun |
Up to 30kV accelerating voltage |
Back scattered electron detector
Secondary electron detector
EDXS detection on 50mm SSD from Oxford Instruments |
Image resolution is sub-10nm
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SEM sample can be moved plus/minus 10mm in X and Y
Working distances variable from around 3 to 15mm |
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Standard SEM samples |
Standard vacuum in the microscope column |
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Sputter coating for insulating specimens |
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Spectral resolution: 130eV approx. on EDXS |
6234678cfe8f7ffef201bddb |
SEM – Zeiss Merlin |
UNIVERSITAT AUTÒNOMA DE BARCELONA |
na |
Scanning electron microscopy with energy dispersive X-ray microanalysis |
Field Emission Gun |
Beam voltage: from 0.5 kV to 30 kV
Beam current: from 20 pA to 40 nA |
Secondary Electrons Detectors: ET and In-lens
Backscattered detectors: ASB (Standard detector) and ESB (Energy Selective Backscattered)
X-Ray detector EDS Oxford LINCA X-Max
Low voltage imaging |
0.8nm at 15kV, 1.4nm at 1kV |
5 axis motorized eucentric specimen stage |
In-situ plasma cleaner |
no |
na |
0 |
Max size: 130x130x50mm |
High vacuum |
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Pd/Au coating, embedding, polishing
Ultramicrotomy |
No |
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62346b93fe8f7ffef201bdf4 |
Zeiss Supra 55 VP @ Laboratory for Micro- and Nanotechnology |
PAUL SCHERRER INSTITUT |
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SEM |
Schottky field emission electron gun, Gemini column |
0.1-30keV |
In-lens SE detector
Chamber Everhart-Thornley detector
Retractable backscattered electron detecor (high keV)
Variable pressure (low vacuum detector) |
1 nm (15keV), 1.7 nm (1keV) |
Fully motorized stage,with tilt and rotation, several sample holders (flat, tilted) |
Cr sputter coater for charge compensation |
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6" wafer loadable and partially covered, 4" fully observable, various chip sizes |
High vacuum |
Chamber camera |
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632ad716ade32b703c958714 |
SEM |
Institut de Ciència de Materials de Barcelona |
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High resolution surface imaging, low vacuum imaging, environmental SEM capabilities and chemical composition analysis |
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High brightness field-emission gun (FEG) from a Zirconium Tungsten filament.
Accelerating Beam Voltage: 200V – 30kV.
Probe current: up to 100nA – continuously adjustable
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Secondary electrons (SE) Backscattered electrons (BSE) Extended vacuum mode (ESEM) and Energy Dispersive X-ray Spectroscopy (EDX).
Detectors:
• Everhardt-Thornley SED • Low-vacuum SED (LFD) • Gaseous SED (GSED) • IR-CCD CCD: Infrared inspection camera • Solid-state BSED
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•High-vacuum - 1.2nm at 30kV (SE) - 2.5nm at 30kV (BSE) - 3.0nm at 1kV (SE)
• Low-vacuum - 1.5nm at 30kV (SE) - 2.5nm at 30kV (BSE) - 3.0nm at 3kV (SE)
• Extended vacuum mode (ESEM) - 1.5nm at 30kV (SE)
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Chamber • 284mm left to right • 10mm analytical WD • 8 ports • EDX take-off angle: 35°
4-axis motorized stage • Eucentric goniometer stage • X,Y = 50mm • Z = 50mm (25mm motorised) • T = -15° - to +75° (manual) • R = 360° continuous • Repeatability: 2µm
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• High vacuum: < 6e-4 Pa
• Low vacuum: 10Pa – 130Pa
• Environmental mode: 10Pa – 4000Pa
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The microscope also features an EDS detector designed for light elements starting from Be, with an energy resolution of 132 kV. This tool enables the chemical analysis with a high lateral resolution (point analyses and elemental mapping), as required for the characterization of complex multicomponent nanostructured materials.
The microscope is also equipped with RAITH e-beam for lithography and nano-lithography.
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632c4128ade32b703c95ae53 |
SEM at EURONANOLAB - CEITEC |
EURONANOLAB |
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632c413eade32b703c95ae56 |
SEM at EURONANOLAB - FEMTO-ST |
EURONANOLAB |
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632c4154ade32b703c95ae59 |
SEM at EURONANOLAB - MMI |
EURONANOLAB |
na |
na |
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no |
na |
0 |
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no |
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632c4165ade32b703c95ae5c |
SEM at EURONANOLAB - IMT |
EURONANOLAB |
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632d6a84ade32b703c95c01c |
SEM MAGELLAN 400L |
Centre de Nanosciences et de Nanotechnologies -CNRS Palaiseau |
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eXtra High Resolution Scanning Electron Microscope. Equipped with a STEM detector, an EDS INCA system and a vCD detector (for BSED at low voltage). |
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Electron gun: FEG Schottky (+"UniColor" monochromator)
Voltage: 200V - 30kV
Current: 1.6 pA to 100 nA
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Detectors: SE (ETD, TLD), BSE (vCD), EDS X-Max (50mm^2), STEM |
Resolution: 0.9 nm @ 1kV
Resolution STEM mode: 1nm@30kV
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Max sample size: 4 inches wafers, 5 inches photomask
Stage: 5 axis compucentric piezo stage, deceleration |
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Magnification: x30 to 2000000x (Polaroïd)
Anticontaminator (cold trap), plasma cleaner
Autoloader
Column Elstar (no mechanical alignment) |
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632d6c69ade32b703c95c02b |
Scanning Electron microscope |
JOINT RESEARCH CENTRE IN ISPRA |
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The Dual Beam SEM / FIB is used for nanoscale imaging, material machining and analysis. It combines ultra-high resolution field emission Scanning Electron Microscopy (SEM) and Focused Ion Beam (FIB) etching and deposition. |
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632d8e8aade32b703c95c21a |
SEM at EURONANOLAB - IMM |
EURONANOLAB |
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6336b51d142b3a3ca16e32bb |
FE-SEM at CNR-DSCTM - ISTEC |
CNR-Dipartimento di Scienze Chimiche e Tecnologia dei Materiali |
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Scanning electron microscopy with energy dispersive X-ray microanalysis |
W-ZrO2 source with Schottky effect and hot cathode gun |
Gemini ™ electro-optical column (ZEISS) with no electromagnetic crossover lenses, with beam booster (+ 8kV) on the liner, for low electronic acceleration voltages (EHT, down to 100 eV) observations and High-Current Mode on probe current, with 100 eV EHT at 30KeV |
Detector Everhart-Thornley for detection of secondary electrons, SE2;
In-Lens coaxial annular detector for low energy electrons, SE1;
ASB-CBZD 4-sector ring detector (Angular Selective BSE) with topo-phase effect for backscattered secondary electrons (> 50 eV); |
High resolution Imaging (~ 0.1nm) |
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Energy Dispersive Spectroscopy micro-analysis system (EDS) device Oxford Energy X-Act, with 10 mm² active area SDD detector, interfaced by INCA software for compositional, point and area analysis.
STEM (Scanning transmission electron microscopy) probe is installed (Zeiss) with 12X specimen stage carousel with multiple Si diodes detectors, for signals in bright field (BF) and dark field (DF), both from the annular detector DF (ADF), and from the segments prepared for the high degrees angles (HAADF). |
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Resolution up to 125 eV (measured according to ISO 15632: 2002)
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63457f34142b3a3ca16ed09a |
Quanta 650 ESEM |
INTERNATIONAL IBERIAN NANOTECHNOLOGY LABORATORY |
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SEM imaging with a resolution of about 1 nm at 30 kV; Low vacuum/Environmental SEM Imaging of uncoated materials; Cooling/Heating stage (in-situ): -20°C to 1500°C |
Field-emission |
1–30 kV |
SE/BSE/EDXS detectors (Topographical/Structural analysis/Chemical analysis) |
SEM imaging resolution is about 1 nm at 30 kV |
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samples of up to 25 cm in diameter |
High vacuum; possible Low vacuum/Environmental SEM |
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639626f62c820c0cf7d8e5b2 |
SEM at EURONANOLAB - PoliFAB |
EURONANOLAB |
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639628122c820c0cf7d8e5b3 |
SEM at EURONANOLAB - LAAS |
EURONANOLAB |
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6396418a2c820c0cf7d8e5c5 |
SEM at EURONANOLAB - IEMN |
EURONANOLAB |
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639641cd2c820c0cf7d8e5c7 |
SEM at EURONANOLAB - FBK |
EURONANOLAB |
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639642192c820c0cf7d8e5c8 |
SEM at EURONANOLAB - Nanotec |
EURONANOLAB |
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63e5fb95288333691943c65b |
SEM – Zeiss EVO MA10 |
UNIVERSITAT AUTÒNOMA DE BARCELONA |
na |
Scanning electron microscopy with energy dispersive X-ray microanalysis |
Tungsten filament |
Beam voltage: from 3 kV to 30 kV. |
Secondary Electrons Detector (SE). Backscattered detectors (ASB) X-Ray detector EDS Oxford LINCA (EDX) |
10 nm at 30 kV |
5 axis motorized eucentric specimen stage |
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no |
na |
0 |
Max size: 130x130x50mm |
High vacuum; possible environmental SEM |
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651ec6039ded42bca9b025dd |
Environmental variable pressure electron scanning microscope ESEMTM Quanta 200, FEI |
CNR-Dipartimento di Scienze Chimiche e Tecnologia dei Materiali |
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