L. Wu, M. Baljozovic, G. Portale, D. Kazazis, M. Vockenhuber, T. Jung, Y. Ekinci, S.Castellanos

Inorganic resists show promising performances in extreme ultraviolet (EUV) lithography. Yet, there is a need for understanding the exact chemical mechanisms induced by EUV light on these materials. Aim: To gain knowledge on the EUV chemistry of inorganic resists, we investigate hybrid inorganic–organic molecular compounds, metal oxoclusters (MOCs). Their molecular nature allows for the monitoring of specific structural changes by means of spectroscopy and thus for the elucidation of the mechanisms behind pattern formation.