62330884ff8d760b95422b61 |
Mask Aligners MJB3 and MA25 |
CNR-Istituto Officina Dei Materiali (Trieste) |
Ultra Violet Lithography |
350W HBO lamps |
Primary exposure wavelength 365nm |
Achievable resolutions: 2.0 µm in soft contact mode, 1.0 µm in hard contact mode |
MJB3: high-precision alignment stage accurate to 0.5 µm and a brightfield microscope equipped with 5X, 10X and 25X objectives
MA25: simultaneous double side exposure and manual operation of wafers and small samples, alignment accuracy between upper and lower side of the wafer of <2 microns, and alignment table rotation of <2 degrees |
MJB3: substrates of various sizes up to 3 inches in diameter and 3mm in thickness, and masks up to 4 inches
MA25: maximum wafer diameter of 4" and maximum mask size of 5" x 5" |
A large set of general purpose masks (gratings dots etc) available |
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62346519fe8f7ffef201bdc2 |
Mask aligner MJB4 (soft UV) (316) |
LUNDS UNIVERSITET + MAX IV |
Contact optical lithography
Exposure type: Soft contact, hard contact, Vacuum contact, flood exposure. |
Soft UV source |
365 nm (i-line), 405 nm (h-line), 436 nm (g-line)
Intensity approx 15mW/cm2 - 30mW/cm2 |
Resolution: Approx. 1µm
Alignment accuracy: Approx. 1µm |
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Small samples: 3mm up to approx. 10mm
Wafers:1, 2, 3 and 4" wafers.
Max sample thickness: 4mm
Can accomodate mask sizes: 4" and 5". |
Ellipsometry to measure resist thickness. Pattern inspection: Optical microscopy, or scanning electron microscopy. |
ISO 5 |
Sample preparation: Spin coating, pre- and post-exposure baking, pattern development. |
No |
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62346a15fe8f7ffef201bde7 |
Mask Aligners MA6/MA8/MJB3 |
PAUL SCHERRER INSTITUT |
Optical lithography |
UV light |
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MA6/MA8: max 0.6 μm
MJB3: >1 μm |
MA6/MA8: alignment accuracy ~1 μm
MJB3: alignment accuracy few microns |
MA6: 4" and 6" wafers only
MA8: 6" and 8" wafers only
MJB3: chips and wafers up to 3" |
Spin-coater, wet-bench, developers, hot-plates, microscopes, etc |
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365 and 405 nm |
Contact modes:
MA6: Hard/soft/vacuum/proximity
MA8: Hard/soft/vacuum
MJB3: soft |
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62d66d10f684fb9143b13205 |
Dilase 250, Kloe instruments |
CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY |
UV Laser lithography |
1um spot size, 365nm wavelenght LED UV laser |
30mW |
1um lateral resolution |
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substrates up to 4" wafers, exposure area up to 100x100mm |
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No |
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62d66d4bf684fb9143b13206 |
KUB3, Kloe Instruments |
CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY |
Mask aligner UV lithography |
365nm LED UV lamp |
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2um lateral resolution |
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substrates up to 4" wafers, masks up to 5x5" |
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No |
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632c7428ade32b703c95b83e |
UVL at EURONANOLAB - IEMN |
EURONANOLAB |
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632c7446ade32b703c95b84b |
UVL at EURONANOLAB - FEMTO-ST |
EURONANOLAB |
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642ee6a3225dd2aa94957127 |
UVL at EURONANOLAB - LAAS |
EURONANOLAB |
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642ee6bb225dd2aa94957128 |
UVL at EURONANOLAB - PoliFAB |
EURONANOLAB |
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642ee6d4225dd2aa94957129 |
UVL at EURONANOLAB - IMM |
EURONANOLAB |
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642ee71b225dd2aa9495712b |
UVL at EURONANOLAB - IMT |
EURONANOLAB |
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6502c9f333d019df077397f9 |
UV lithography - mask aligner |
Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias |
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67800e00b8f48aa921c0328a |
UVL at EURONANOLAB - MMI |
EURONANOLAB |
na |
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no |
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no |
na |
na |
0 |