Focused Ion Beam

Lithography & Patterning (Electron and ion beam lithography)

The common FIB Workstation is a high resolution FE-SEM combined with a FIB Ga+ column plus a multi channel gas injection system: Pt, C, W, Co, Au and SiOx are some of the usual precursors for ion or electron induced deposition (FIBID/FEBID); and Fluorine, Iodine or H2O are used for enhanced etching. It can be equipped with different detectors: Everhart-Thornley SE, In-lens SE detector, Backscattered Detector, EDX or STEM among others. Such systems are usually equipped with several nanomanipulators which allow both manipulation and electrical contacting in-situ, and an electron beam-blanker and nanolithography capabilities are also an option.

The main application areas are Nanofabrication and prototyping with nanometric resolution, FIB site specific cross sectioning and SEM inspection on a wide variety of samples (electronics, ceramics, metallurgy, biology…), TEM lamellae preparation, circuit editing and electrical and mechanical inspection in vacuum conditions, nanolithography both with ions or electrons... Actually, due to its high performance and accessories different applications are arising continuously.

 

 

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          provided at NFFA-Europe laboratories by:
CNR-IOM (TS)
Italy
C2N-CNRS
France
CSIC-CNM
Spain
INL
Portugal
KIT
Germany
LUND + MAX IV
Sweden
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          provided by:
EURONANOLAB
France
CNR-IOM (TS)
Italy
LEO-ZEISS Cross-Beam 1540 XB system
High resolution imaging, nano-etching and –deposition, with Ga Ion beam
Ion gun: Ga+
Ion beam voltage: 30 keV Ion beam current: 1pA – 500nA
SE and In-Lens detector available
Max. sample size 4"
EDAX EBS detector for chemical micro analisys Fully integrated Raith Pattern generator for direct Ion Beam Lithography