Reactive Ion Etching

Lithography & Patterning (Patterning, replication, and sample navigation)

RIE is used to etch various materials under vacuum in the presence of reactive ions. Typically a wide range of materials can be etched by use of various gas mixtures containing fluorine, chlorine, oxygen and other elements. An RF source accelerates stray electrons between a pair of plates in the presence of a low-pressure gas and reactive ions and free radicals (like monoatomic fluorine) are created. The surface to be etched is bombarded by the reactive ions and the material is etched by forming a volatile component. The etching mechanism can either be physical (sputtering mechanism) where the target material is mechanically sputtered away by the accelerated ions, chemical where the ions react with the target material to form a volatile compound, or both. The selection of the etch parameters (gas mixture, gas flow, pressure, RF power and bias) can give control over the anisotropy, selectivity, etching rate, and surface roughness by controlling this etching mechanism.

                   

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          provided at NFFA-Europe laboratories by:
CNR-IOM (TS)
Italy
C2N-CNRS
France
CSIC-CNM
Spain
CSIC-ICMAB
Spain
FORTH
Greece
ICN2
Spain
INL
Portugal
KIT
Germany
LUND + MAX IV
Sweden
PSI
Switzerland
INESC-MN
Portugal
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          provided by:
EURONANOLAB
France
CNR-IOM (TS)
Italy
RIE
Dry etching of Si, SiO2, Si3N4 and resist residual layer removing, Ar milling and surface activation by O2 plasma
Operation Gas: O2, N2, Ar, CF4, SF6, H2, CHF3
Sample size: up to 5"
LUND + MAX IV
Sweden
Etcher RIE Trion Sirus T2 Plus
Reactive ion etching (RIE) for etching Si, SiO2, Si3N4, W, Mo and polymers
Plasma excitation with RF (13.56 MHz) Gases available: SF6, O2, Ar, CF4, CHF3
RF power up to 600 W, room temperature operation only
End point detector Intellevation LEP400
Up to 8 inch wafer size samples Room temperature operation only
Process chamber base pressure ~10-3 Torr Process pressure 10 - 500 mTorr
Laser interferometric dry etch depth monitor
LUND + MAX IV
Sweden
Etcher ICP-RIE Plasmalab System 100
Inductively coupled plasma (ICP) reactive ion etching (RIE) for etching almost all different types of materials, including III-V semiconductors, silicon, dielectrics and metals Only glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and silicones are not allowed
Plasma excitation with ICP (13.56 MHz) and RF (13.56 MHz) Gases available: SF6, O2, Ar, H2, Cl2, CF4, C4F8
ICP power up to 2 kW and RF power up to 300 W, room temperature operation only
Up to 4 inch wafer size samples Room temperature operation only
Process chamber base pressure ~10-6 - 10-7 Torr Process pressure 5 - 90 mTorr
PSI
Switzerland
Oxford plasmalab Systems 100 @ Laboratory for Micro and Nanotechnology
Reactive Ion Etching
Two RIE-ICP systems one dedicated to the Bosch process (Au-free) and one for general purpose etches (F-based) Typical gases C4F8, CF4, SF6, O2, Ar
Up to 4" wafers
High Vacuum, LN2 cooled stage
ICP
Relevant clean room tools Cl-based plasma etching tool dedicated to Cr etching