SQUID technique is extremely powerful to measure the moment versus applied magnetic field (e.g. hysteresis loops) or moment versus temperature curves of magnetic nanomaterials in a broad temperature range. Its sensitivity is very high, therefore a small amount of material is enough to ensure reliable signals. In addition to hysteresis loops, SQUID measurements also allow precise determination of the Curie, Néel or blocking temperatures of ferromagnetic, antiferromagnetic or superparamagnetic nanoparticles.
SQUID Magnetometry with DC & AC options, 7 Tesla maximum field and ultra low field capability is offered to explore static and dynamic magnetic properties of various samples including nanoparticles, thin films, bulk materials, even samples in liquid media at extended areas of temperatures (Low-T: 1.9 - 400 K) and (High-T: 300 - 800 K). SQUID is a state-of-art facility that probes the cooperative magnetism and evaluates the relative interactions.
In TEM/Scanning TEM (STEM) high energy electrons incident on ultra-thin samples, allow imaging, diffraction, electron energy loss spectroscopy and chemical analysis of solid materials with a spatial resolution on the order of 1-2 Å. Samples must have a thickness of a few tens of nanometres and are prepared in sample preparation laboratory.
In SEM a beam is scanned over a sample surface while a signal from secondary or back-scattered electrons is recorded. SEM is used to image an area of the sample with nanometric resolution, and also to measure its composition, crystallographic phase distribution and local texture.
XPS is a surface spectroscopic technique for quantitative measurements of the elemental composition or stoichiometry and the chemical state of the present elements, like their oxidation state and chemical bonds. XPS is highly surface sensitive, giving chemical and binding energy information from the a narrow region close to the surface.
We offer magneto-transport characterizations of semiconductor and metallic samples at temperatures down to liquid He and fields up to 7T. Density and mobility of carriers are measured through Hall effect, as well as quantum transport phenomena in 2D systems at low T. Carrier populations can be tuned by bias voltages and external illumination.
MBE allows growth of high quality semiconductors, oxides and organic epitaxial layers, with crystal structure commensurate with the substrate. It is used to build nanostructures (quantum dots, nanowires), layered heterostructures for lasers, photodetectors, LED and optoelectronic devices.
