The facility consists of a variable temperature, liquid helium-cooled magneto-transport equipment for electrical characterization by Oxford Instruments (T in the 1.5 – 400 K range, magnetic field up to +-7 T). It has capabilities for 2-point or 4-point measurements, for Hall effect measurements in the Van der Pauw and Hall bar geometries, as well as I-V and C-V characteristics. Additional electrical contacts allow application of gate biases for sample polarization, and illumination through diodes of chosen wavelength. Samples up to 7 X 4 mm^2 size are fitted in a 16-pin dual-in-line socket, which can be placed perpendicular or parallel to the magnetic field. Larger samples can be accommodated if needed. All 16 electrical connections can be independently and automatically switched through a matrix switch unit. Samples with a wide range of resistivities can be measured, ranging from diluted 2D electron gases in semiconductors to metals. It is possible to record sweeps of gate voltages and magnetic fields (for, e.g., the observation of Shubnikov–de Haas oscillations / Quantum Hall effect in semiconductor 2D systems), as well as temperature. All experiments are operated through a user-friendly LabView interface, which allows control of temperature, magnetic field and electrical connections.
2-point or 4-point measurements, constant current application, voltage detection with lock-in amplifier
Up to 7 X 4 mm2 size in a 16-pin dual-in-line socket, Van der Pauw and Hall bar geometries
Temperature: 1.5-400K
CSIC-ICMAB
Spain
Magneto Transport
Magnetic field and/or temperature dependence of electrical resistivity
H=0 to ±90kOe
Thin films up to 5x5mm2 or pellets or bulk samples up to 10x10mm2
T=2K to 400K
1 mOhm – 10 MOhm
0-360° sample rotation respect to magnetic field
10 torr He atmosphere
EURONANOLAB
France
MT at EURONANOLAB - PoliFAB
INESC-MN
Portugal
Magnetoresistance measurement setups
Spintronic sensors and devices
We have several setups, up to 200mT fields, in plane and out-of plane fields. Temperature in a hot plate during deposition, and also rotation of the sample/field.
Home made, several setups with different possibilities
In SEM a beam is scanned over a sample surface while a signal from secondary or back-scattered electrons is recorded. SEM is used to image an area of the sample with nanometric resolution, and also to measure its composition, crystallographic phase distribution and local texture.
XRD provides non-destructive information on the structural order of a material. At large scattering angles XRD permits to identify different crystal phases and to quantify lattice distances and crystalline volume fractions. At low angles of incidence the surface roughness of a single crystal and the thickness of a deposition layer can be obtained.
Electron-beam lithography is a direct write nanopatterning technique utilizing a finely focused electron beam in order to write nanoscale patterns on special e-beam resists in two and three dimensions. Compared to other nanostructuring methods, it stands out for its high level of flexibility and resolution and reasonable patterning speed.
PLD is widely used to grow thin films of complex oxides and other inorganic and organic materials. It is a simple and versatile technique based in the congruent ablation of a solid material irradiated by an ultraviolet laser.
This is a simple physical method to deposit, in form of thin film or multilayers, a wide variety of materials from simple metals to complex inorganic structures, between few Angstroms and hundreds of nanometers. The technique is based on the evaporation of solid surface by field-accelerated ions of a heavy gas that are focused by a magnetic field.
