Transport properties

Theory & Simulation (Theory & Simulation )
  • Electronic quantum charge transport through junctions at the nanoscale, molecular contacts, 1D and 2D systems, bulk heterostructures; Green’s function Landauer formalism and Wannier functions - based implementation for efficient transport calculations on realistically complex quantum contacts and functionalized systems.
  • Spin-dependent conductivities for spintronics applications; magnetic molecular spin valves and extended heterostructures; electronic transverse transport, anomalous, spin-, inverse spin-Hall effect, Nerst effect, spin-orbit torque, topological transport.
  • Thermal transport, Seebeck coefficients, semiclassical Boltzmann transport equation solved through Wannier interpolation of band energies and their derivative, phonon scattering, heat conduction through collective phonon excitations, screening of thermoelectrics from homogeneous bulk systems to possibly functionalized 1D and 2D quantum systems.

 

Keywords: electronic and thermal conductivities, Seebeck coefficients, thermoelectrics, electronic transverse transport, anomalous, spin-, inverse spin-Hall effect, Nerst effect, spin-orbit torque, topological transport, nanoscale junctions, molecular contacts, 2D systems, ballistic transport, spin-dependent electronic conductivity through heterostructures.

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          provided by:
CNR-IOM (TS)
Italy
ICN2
Spain
UMIL
Italy
EPFL
Switzerland
JÜLICH
Germany
ICN2
Spain
SIESTA
Quantum Electronic Transport Electronic devices Molecular Electronics Electrical conductivity Thermal conductivity of Materials Electron-phonon coupling
CNR-IOM (TS)
Italy
Quantum ESPRESSO
Ballistic Transport ( PWCOND package)
JÜLICH
Germany
FLEUR
UMIL
Italy
TRANSIESTA
Quantum electronic transport (ballistic regime) for nanojunctions under external applied bias. I-V characteristics, spatial distribution of the current, also spin-polarized. Examples of applications: graphene-based nanojunctions, molecular nanojunctions. Works with SIESTA.
UMIL
Italy
EXTENDED-HUBBARD MODULE
Resonant tunneling transport at the mesoscale for correlated systems, including on-site interaction and long range Coulomb repulsion. Conductance spectrum as a function of the temperature. Example of application: nm-long arrays of defects in bulk systems (es. point defects in silicon), Quantum simulators of hubbard systems.
EPFL
Switzerland
Quantum ESPRESSO