Inductively Coupled Plasma

Lithography & Patterning (Patterning, replication, and sample navigation)

A time varying axial magnetic field induces an electric field which keeps the electrons in a circular orbit and increases the probability to excite another molecule. This way the plasma density can be increased without having to increase the DC bias. RF biasing can be used independently to increase or decrease the energy of the ions impinging on the specimen surface. Inductively-coupled plasma reactive-ion etching (ICP-RIE) can achieve high etch rates by high ion or radical densities, while high material selectivity and low surface damage is achieved by using low ion energies. High density plasmas created by ICP systems can operate at low pressures and can yield significantly improved profile control for very deep, anisotropic etches.

 

                                                                                                                                                                                                                                                                

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          provided at NFFA-Europe laboratories by:
CNR-IOM (TS)
Italy
C2N-CNRS
France
CSIC-CNM
Spain
FORTH
Greece
ICN2
Spain
INL
Portugal
LUND + MAX IV
Sweden
PSI
Switzerland
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          provided by:
EURONANOLAB
France
CNR-IOM (TS)
Italy
STS MESC MULTIPLEX ICP @ Facility of Nano Fabrication
High frequency Inductively Coupled Plasma etch system for deep Si etching Several BOSCH like processes implemented allowing high aspect ratio structures Continuous mode for nanostructure fabrication
Operation Gas: O2, N2, Ar, SF6, C4F8
The plasma is inductively coupled at 13.56 MHz via a matching unit and coil assembly
Down to the 10-nm scale in lateral resolution and aspect ratios of up to 10
Sample: up to 5” wafers can be loaded, but small samples can be processed as well
Independent energy control is provided by biasing of the electrode (platen) via automatic power control and impedance matching
CSIC-CNM
Spain
ICP-DRIE Alcatel AMS 110 DE
Inductively coupled plasma (ICP) deep reactive ion etching (DRIE) for etching a great variety of materials including silicon, germanium, SiC, III-V semiconductors, dielectrics and metals
Plasma excitation with ICP (13.56 MHz) and RF (13.56 MHz) Gases available: SF6, O2, Ar, He, CH4 and C4F
ICP power up to 3 kW and RF power up to 500 W
Bosch process aspect ratios up to 1:20 Si thickness etching from 50 nm to 500 mm
Up to 4 inch wafer size samples Sample temperatures from -20ºC to 50ºC CMOS contaminant metals (alkalines, noble metals) are allowed
Process chamber pressure 5 - 100 mTorr Reactor chamber Temperature: 140ºC
Bosch process Dielectric substrates etching capability (pyrex)
Optical microscope Reflectometer for film thickness measurement Confocal microscope Profilometer
CSIC-CNM
Spain
ICP-DRIE Alcatel 601 E
Inductively coupled plasma (ICP) deep reactive ion etching (DRIE) for etching a great variety of materials including silicon, germanium, SiC, III-V semiconductors and dielectrics
Plasma excitation with ICP (13.56 MHz) and RF (13.56 MHz) Gases available: SF6, O2, He and C4F8
ICP power up to 2 kW and RF power up to 500 W
Bosch process aspect ratios up to 1:20 Si thickness etching from 50 nm to 500 mm
Up to 4 inch wafer size samples Sample temperatures from -170ºC to 50ºC CMOS contaminant metals (alkalines, noble metals) NOT allowed
Process chamber pressure 5 - 100 mTorr Reactor chamber Temperature: 140ºC
Bosch process
Optical microscope Reflectometer for film thickness measurement Confocal microscope Profilometer
CSIC-CNM
Spain
ICP-DRIE Oxford S-100
Inductively coupled plasma (ICP) deep reactive ion etching (DRIE) with 2 chambers for etching Al or Al/Cu and SiC or photoresists
Plasma excitation with ICP (13.56 MHz) and RF (13.56 MHz) Gases available: SF6, O2, Cl2, HBr, BCl3, N2 and He
ICP power up to 3 kW and RF power up to 600 W
Up to 4 inch wafer size samples Sample temperatures from -20ºC to 50ºC CMOS contaminant metals (alkalines, noble metals) NOT allowed
Chamber base pressure (vacuum): 10-6 Torr
Optical microscope Reflectometer for film thickness measurement Confocal microscope Profilometer
PSI
Switzerland
Oxford plasmalab Systems 100 @ Laboratory for Micro and Nanotechnology
RIE-ICP system dedicated to the Bosch process (Au-free) RIE-ICP system for general purpose etches (F-based)
Typical gases C4F8, CF4, SF6, O2, Ar
Up to 4" wafers
High Vacuum, LN2 cooled stage
RIE
Relevant clean room tools Cl-based plasma etching tool dedicated to Cr etching
LUND + MAX IV
Sweden
ICP-RIE - APEX SLR - Cl based
Controlled nanoscale etching of III-V semiconductors, Si, metals and polymers with chlorine-based chemistry.
ICP and RF Plasma excitation Process gases: Cl2, BCl3, CH4, Ar, O2, H2
ICP (2MHz, 1kW) and RF (13.56MHz, 300W).
8" max wafer diameter. Standard config. for 2" wafer clamping.
Optical emission spectroscopy (OES) endpoint detection system.
Base pressure for the process chamber: 10^-6 - 10^-8 Torr Process pressure: 3 - 100 mTorr. Process gases: Cl2, BCl3, CH4, Ar, O2, H2
Substrate Temperature control: -40°C to 170°C. He back side cooling.
Optical emission spectroscopy (OES) EndpointWorks 2.0 system.
ICN2
Spain
PlasmaPro Cobra100, Oxford Instruments
ICP-RIE system
3000W ICP power source, 600W RIE power source
substrates up to 8" wafers
3e-7mTorr
Yes
C2N-CNRS
France
ICP-RIE Sentech SI500
ICP-RIE Fluorine plasma etcher SI 500 uses an inductively coupled plasma with low ion energy for low damage etching and nano structuring. This equipment is mainly dedicated to the etching of nanostructures for layers containing in particular silicon and germanium.
Gas Line: SF6, CF4, C4F8, CHF3, O2 (x2), Ar, N2
HF generators power ICP: 1200 Watts at 13,56 MHz HF generators power platen: 600 Watts at 13,56 MHz
Wafer Holder: 6” 4” 2” Chuck : mechanical Mask: Electro-and photo-sensible resist, SiO2, Si3N4
End point detector: Laser interferometry 670 nm
Wafers thermalization: -25°C à 250°C ; He-backside contact
EURONANOLAB
France
ICP at EURONANOLAB - IEMN
EURONANOLAB
France
ICP at EURONANOLAB - FEMTO-ST
EURONANOLAB
France
ICP at EURONANOLAB - LAAS
EURONANOLAB
France
ICP at EURONANOLAB - PoliFAB
EURONANOLAB
France
ICP at EURONANOLAB - Nanotec
EURONANOLAB
France
ICP at EURONANOLAB - IMT