A time varying axial magnetic field induces an electric field which keeps the electrons in a circular orbit and increases the probability to excite another molecule. This way the plasma density can be increased without having to increase the DC bias. RF biasing can be used independently to increase or decrease the energy of the ions impinging on the specimen surface. Inductively-coupled plasma reactive-ion etching (ICP-RIE) can achieve high etch rates by high ion or radical densities, while high material selectivity and low surface damage is achieved by using low ion energies. High density plasmas created by ICP systems can operate at low pressures and can yield significantly improved profile control for very deep, anisotropic etches.
STS MESC MULTIPLEX ICP @ Facility of Nano Fabrication
High frequency Inductively Coupled Plasma etch system for deep Si etching
Several BOSCH like processes implemented allowing high aspect ratio structures
Continuous mode for nanostructure fabrication
Operation Gas: O2, N2, Ar, SF6, C4F8
The plasma is inductively coupled at 13.56 MHz via a matching unit and coil assembly
Down to the 10-nm scale in lateral resolution and aspect ratios of up to 10
Sample: up to 5” wafers can be loaded, but small samples can be processed as well
Independent energy control is provided by biasing of the electrode (platen) via automatic power control and impedance matching
CSIC-CNM
Spain
ICP-DRIE Alcatel AMS 110 DE
Inductively coupled plasma (ICP) deep reactive ion etching (DRIE) for etching a great variety of materials including silicon, germanium, SiC, III-V semiconductors, dielectrics and metals
Plasma excitation with ICP (13.56 MHz) and RF (13.56 MHz)
Gases available: SF6, O2, Ar, He, CH4 and C4F
ICP power up to 3 kW and RF power up to 500 W
Bosch process aspect ratios up to 1:20
Si thickness etching from 50 nm to 500 mm
Up to 4 inch wafer size samples
Sample temperatures from -20ºC to 50ºC
CMOS contaminant metals (alkalines, noble metals) are allowed
Bosch process
Dielectric substrates etching capability (pyrex)
Optical microscope
Reflectometer for film thickness measurement
Confocal microscope
Profilometer
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CSIC-CNM
Spain
ICP-DRIE Alcatel 601 E
Inductively coupled plasma (ICP) deep reactive ion etching (DRIE) for etching a great variety of materials including silicon, germanium, SiC, III-V semiconductors and dielectrics
Plasma excitation with ICP (13.56 MHz) and RF (13.56 MHz)
Gases available: SF6, O2, He and C4F8
ICP power up to 2 kW and RF power up to 500 W
Bosch process aspect ratios up to 1:20
Si thickness etching from 50 nm to 500 mm
Up to 4 inch wafer size samples
Sample temperatures from -170ºC to 50ºC
CMOS contaminant metals (alkalines, noble metals) NOT allowed
ICP-RIE Fluorine plasma etcher SI 500 uses an inductively coupled plasma with low ion energy for low damage etching and nano structuring. This equipment is mainly dedicated to the etching of nanostructures for layers containing in particular silicon and germanium.
Gas Line: SF6, CF4, C4F8, CHF3, O2 (x2), Ar, N2
HF generators power ICP: 1200 Watts at 13,56 MHz
HF generators power platen: 600 Watts at 13,56 MHz
In SEM a beam is scanned over a sample surface while a signal from secondary or back-scattered electrons is recorded. SEM is used to image an area of the sample with nanometric resolution, and also to measure its composition, crystallographic phase distribution and local texture.
AFM is a surface sensitive technique permitting to obtain a microscopic image of the topography of a material surface and certain properties (like friction force, magnetization properties…). Typical lateral image sizes are within a range of only a few Nanometers to several Micrometers, and height changes of less than a Nanometer.
Laser patterning is a technique for the controlled patterning of materials at micro- and nano-scales. It offers the ability to directly write patterns on the surface and complex 3D channels into the bulk of solid materials, also biomaterials. Applications can range from microfluidic systems and sensors to tissue engineering scaffolds.
Electron-beam lithography is a direct write nanopatterning technique utilizing a finely focused electron beam in order to write nanoscale patterns on special e-beam resists in two and three dimensions. Compared to other nanostructuring methods, it stands out for its high level of flexibility and resolution and reasonable patterning speed.
VUV/UV/Vis/NIR spectroscopy is the measurement of the attenuation of a beam of light after it passes through a sample or after reflection from a sample surface. It is useful to characterize absorption, transmission, and reflectivity of a variety of technologically important materials, such as gases, film, pigments, coatings, windows, and filters.
