Atomic Layer Deposition

Growth & Synthesis (Chemical depositions of thin films)

ALD is similar to CVD except that the ALD reaction occurs at lower temperature and it is broken into two half-reactions, keeping the precursor materials separated during the reaction. The separation of the precursors is important to achieve a self-limiting surface reaction to enable precise thickness control and ensure uniform coatings and compactness even in complicated 3D structures.

ALD has a rich history in microelectronics. It is studied as a potential technique to deposit high-k (high permittivity) gate oxides, high-k memory capacitor dielectrics, ferroelectrics, and metals and nitrides for electrodes and interconnects. The motivation for high-k oxides comes from the problem of high tunnelling currents through the currently used SiO2 MOSFET gate dielectric when it is downscaled to a thickness of 1,0 nm and below. With the high-k oxide, a thicker gate dielectric can be made for the required capacitance density, thus the tunnelling current can be reduced through the structure.

Importantly, the number of materials that can be prepared by ALD has tremendously increased in the past decade and noble metals, ternary oxides, metal fluorides, nitrides, selenides and inorganic-organic hybrid materials are already introduced opening up new opportunities for numerous industrial applications.

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          provided at NFFA-Europe laboratories by:
CNR-DSCTM
Italy
C2N-CNRS
France
CSIC-CNM
Spain
CSIC-ICMAB
Spain
FORTH
Greece
KIT
Germany
LUND + MAX IV
Sweden
PSI
Switzerland
IREC
Spain
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          provided by:
EURONANOLAB
France
LUND + MAX IV
Sweden
Picosun Sunale R-100 (608)
Thermal ALD of high k oxides
TDMAHf for hafnium oxides TMAl for aluminium oxides
Deposition at 50-250° C
Deposited film thicknesses from 0.1-20nm
Up to 2” wafer
E-2 mbar range base pressure
LUND + MAX IV
Sweden
ALD Savannah-100
Thermal ALD of high k oxides
TDMAHf for hafnium oxides TMAl for aluminium oxides
Deposition at 75-250° C
Deposited film thicknesses from 0.1-50nm
Up to 4” wafer
E-2 mbar range base pressure
LUND + MAX IV
Sweden
ALD - Fiji
Thermal and Plasma ALD of oxides and titanium nitrides
TDMAHf for hafnium oxides TMAl for aluminium oxides TEMAZr for Zirconium oxides BDEASi for Siicon oxides TEMATi for titanium nitrides
Deposition at 50-400° C
Deposited film thicknesses from 0.1-100nm
Up to 8” wafer
E-2 mbar range base pressure
PSI
Switzerland
Picosun R200 ALD @ Laboratory for Micro- and Nanotechnology
Atomic Layer Deposition
Gas, liquid, solid, Ir-precursor, WF6, SiH4, Al-precursor, H2 and O2 (plasma source), H20 (+ Ar/N2 as inert gas)
H2/O2 plasma up to 2000W
4" wafer size, solid samples only, should not be prone to O2 plasma
Coarse vacuum down to 1 mbar, N2/Ar atmosphere, temperatures up to ~370°C
Loadloack with sample transfer, manual placement in chamber
CSIC-CNM
Spain
Atomic Layer Deposition Savannah 200
Deposition of very thin dielectric layers (at the moment Al2O3, HfO2 and TiO2) with excellent thickness control and conformality. For layers with thickness from 5nm to 50nm.
Al2O3: TMA and H2O or O3 HfO2: TDMAH and H2O or O3 TiO2: TDMAT and H2O
Thermal ALD, with temperature ranges typically between 150ºC - 350ºC
For flat samples up to 200mm diameter, typically for semiconductor substrates, and preferably those free of metals (or metal traces) other than Al, Ti or W.
remote or presential (but not hands-on)
interaction by telephone or e-mail
KIT
Germany
ALD at KIT
EURONANOLAB
France
ALD at EURONANOLAB - IEMN
EURONANOLAB
France
ALD at EURONANOLAB - Nanotec
EURONANOLAB
France
ALD at EURONANOLAB - UT