Microluminescence

Electronic & Chemical & Magnetic Characterization (Luminescence spectroscopy)

Semiconductors and fluorescent molecules are characterized by an energy gap between the highest occupied electronic state (HOMO in molecules and valence band in semiconductors) and the lowest unoccupied electronic state (LUMO and conduction band, respectively). When an electron is excited from the first to the second, after few nanoseconds relaxes to the equilibrium emitting a photon. This process takes the name of fluorescence in molecules and luminescence in semiconductors. The wavelength of the photon reflects the value of the energy gap, and in some specific samples also the energy of electronic defects in the gap, the electronic density state, the composition, the nanoscale structure, and so on. In case of semiconductors, often using a cryostage to operate at low temperatures increases the efficiency of the luminescence processes and improves the energetic resolution so that quantum effects can be investigated (for instance in quantum wells or quantum dots).

Electrons can be excited by shining photons with a wavelength shorter that that produced during the recombination. Usually to this purpose lasers are the best choice for their high intensity, but diodes or other sources are also employed (photoluminescence). Electrons can be directly injected in lowest unoccupied electron states, by electronic currents (electroluminescence), as in light emitting diodes (LED), or by exposing the sample to an electron beam (cathodeluminescence).

Using of a microscope to illuminate and/or to collect the light emitted from the sample allows to identify with sub-micron precision the region from where the light is emitted, and to acquire luminescence maps. This latter application is of particular interest for those structures, such as quantum wires and quantum dots, in which the luminescence spectrum of individual structures show properties that are averaged out by extensive measurements.

i
@
          provided at NFFA-Europe laboratories by:
CNR-ISM
Italy
C2N-CNRS
France
FORTH
Greece

Instruments datasheets

CNR-ISM
Italy
Microscope for luminescence spectroscopy
Spatially resolved photoluminescence (PL) spectroscopy is a powerful tool, coupling the sensitivity to electronic properties with the morphology, of particular interest for the nanostructured materials. In the CNR-ISM laboratory it is possible to perform both steady state and time dependent sub-micrometer spatially resolved PL.
PL spectroscopy involves the excitation of the sample using: 405 nm CW for stationary PL; 400 nm @ 80 MHz (frequency-doubled of mode-locked Ti:Sa oscillator) for time-resolved PL. The PL is measured in the wavelength range of 400 -1000 nm. Single photon counting temporal resolution is 40 ps @ 80 MHz.
Sub-micrometer laser spotsize on the sample; the available objective are 10x, 100x, 50x with a long focal length suitable for the allocation of the sample in the cryostat.
x,y range is 10 mm
The sample can be mounted in air and in a high vacuum cryostat at LN temperature.
The samples can be measured at atmospheric pressure or at a pressure of 10E-5 mbar.
i
@
          provided at NFFA-Europe laboratories by:
CNR-ISM
Italy
C2N-CNRS
France
FORTH
Greece

Also consider

Structural & Morphology Characterization

SEM Scanning Electron Microscopy

In SEM a beam is scanned over a sample surface while a signal from secondary or back-scattered electrons is recorded. SEM is used to image an area of the sample with nanometric resolution, and also to measure its composition, crystallographic phase distribution and local texture.

Electronic & Chemical & Magnetic Characterization

PL PhotoLuminescence

PL is a non-contact, non-destructive method of probing the electronic structure of materials, often used in the context of semiconductor devices to determine the bandgap energy, the composition of heterostructures, the impurity levels, the crystal quality, and to investigate recombination mechanisms.

Growth & Synthesis

ALD Atomic Layer Deposition

ALD is an advanced thin film manufacturing process for mainstream applications expanding beyond semiconductor processing. It achieves new levels of performance in Li-ion batteries, fuel cells, logic and memory devices, light-harvesting energy (i.e. surface passivation layers, buffer layers in solar cells) but also encapsulation of polymers.