Direct write lithography is a maskless patterning method to produce arbitrary features over large areas. A focused light source is scanned over a surface and exposes a resist according to a CAD design. This technique can be thought as a replacement for a mask aligner with the added capability of spatially modulating the dose (grayscale patterns).

Laser interference lithography is designed for the fabrication of high quality submicrometer size gratings and arrays over an area of a few cm2. The modulation of the array features is obtained by fine tuning the exposure incidence angle. In this configuration low defect density and high reproducibility are enabled.

Displacement Talbot Lithography is a contactless method to produce regular features over large areas. A 3D diffraction pattern is formed below a mask with a periodic pattern. A photoresist-coated substrate is moved vertically through this pattern so the effective dose is integrated in space and time forming a collapsed version of the pattern.

HR 2D and 3D structuring process of a photosensitive material by physical and chemical changes produced in the focusing area of an ultrashort pulse laser of sufficiently high light intensity. 2D resist mask-less patterns, or polymeric micro-parts with a 3D shape can be obtained by scanning the photoresist relative to the beam focus submicron.