Displacement Talbot Lithography (DTL)

Lithography & Patterning (Photon-based lithography)

Displacement Talbot lithography is a novel optical interference technique based on the Talbot effect, suitable for mass-fabrication of high-resolution periodic structures. It can reproducibly achieve subwavelength resolutions on a wafer scale. Moreover, since it is a parallel patterning method, it is extremely fast. A phase shift mask containing a periodic pattern is illuminated with UV or DUV light, such that the region below the mask contains a 3D diffracted light field. The mask pattern is replicated by intense light peaks on vertically spaced planes through this region. During the exposure, the samples undergo several cycles of vertical displacement through multiple copies of the pattern. This unique 3D exposure method renders patterns with high depth-of-focus, making it insensitive to wafer bowing or uneven sample surfaces. The features are produced in a consistent way across the entire wafer allowing patterning also in thick photoresists. Since no mechanical contact is made between the sample and mask this method is well suited to delicate materials. Depending on the application, the technique can be combined with lift-off, dry etching, electroplating or any other pattern transfer technique. Submicron feature sizes, such as linear gratings and two-dimensional hexagonal or square arrays of holes can be achieved at a wafer scale. By tuning the accumulated dose for the exposure, different feature dimensions can be obtained.

provided at NFFA-Europe laboratories by:

PSI

Switzerland

LUND + MAX IV

Sweden

Instruments datasheets

PSI

Switzerland

PhableR200 @ Laboratory for Micro- and Nanotechnology

Applications

Displacement Talbot lithography system for periodic structure patterning over large areas

Source

Two lasers at 377 and 445 nm

provided at NFFA-Europe laboratories by:

PSI

Switzerland

LUND + MAX IV

Sweden

Also consider

Growth & Synthesis

EBE e-beam evaporation

E-Beam evaporation is a physical vapor deposition (PVD) technique whereby an intense electron beam is generated from a filament and steered via electric and magnetic fields to strike the source material (e.g. pellets of Au) and vaporize it within a vacuum environment.

Nano to Micro/Macro

Standard etching Standard dry/wet patterning cleanroom/lab processes

A set of classical microelectronic processes for pattern transfer through etching of thin films than are co-adjuvant to the functional materials of a given sytem under study in the micro or nano domain. It includes wet and dry etching of all those ancillary dielecric or conducting materials.

Structural & Morphology Characterization

SEM Scanning Electron Microscopy

In SEM a beam is scanned over a sample surface while a signal from secondary or back-scattered electrons is recorded. SEM is used to image an area of the sample with nanometric resolution, and also to measure its composition, crystallographic phase distribution and local texture.

Structural & Morphology Characterization

AFM Atomic Force Microscopy

AFM is a surface sensitive technique permitting to obtain a microscopic image of the topography of a material surface and certain properties (like friction force, magnetization properties…). Typical lateral image sizes are within a range of only a few Nanometers to several Micrometers, and height changes of less than a Nanometer.

Nano to Micro/Macro

Standard depos. Standard chemical and physical deposition cleanroom/lab processes

A set of classical microelectronic processes for deposition, of ancillary materials that are co-adjuvant to the obtention in the micro or nano domain of the functional materials that are the object of the Growth and Synthesis installation. It includes LPCVD and PECVD layers deposition or deposition of metal layers by PVD.