Magnetron sputtering

Growth & Synthesis (Physical depositions of thin films)

Sputtering evaporation is a physical method for the growth of thin films. It is a high vacuum technology, depending of the type of material to be grown, that allows evaporating a large variety of materials: from simple metals to complex inorganic materials. Films can be grown with highly controlled thickness. The method consists in introducing a gas inside the growth chamber (with the total pressure regulated in the mTorr range) and under applying a high direct or radio frequency voltage (when target is a metal or an insulator respectively) and with a gun (magnetron) to create a plasma. Plasma ionizes the gas, that is then accelerated by the high voltage and impacts on target surface evaporating atoms from the surface. Gas is usually argon, although oxygen or nitrogen can be used for more complex materials. Evaporated atoms are deposited over the surface that the film must be grown. In variance with other physical methods, sputtering technique is highly reproducible and thicknesses can be very well calibrated by the depositing time.

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          provided at NFFA-Europe laboratories by:
C2N-CNRS
France
CSIC-ICMAB
Spain
INL
Portugal
LUND + MAX IV
Sweden
EURONANOLAB
France
INESC-MN
Portugal
LUND + MAX IV
Sweden
MS - Magnetron sputtering
DC and RF magnetron sputtering
Target materials: Au, Al, Ni, Mo, W, Ti, Si, SiO2, TiN, ITO
Maximum wafer size: 4"
Process chamber base pressure: 10-7 mbar. Ar, N2, O2 gasses.
QCM (Quartz Micro Balance) for monitoring of deposition rate and film thickness
Sample tilt and variable distance are not possible in our PVD-system
CSIC-ICMAB
Spain
MS
Growth of oxide and metallic thin films or clusters
High vacuum system (10-6 Torr) mainly dedicated to the growth oxides thin films by the sputtering technique. The equipment has different guns (1" and 1.3") to grow in RF and DC, it also has a cluster gun. Growth can be done from room temperature up to 800ºC, in a controlled atmosphere of Ar, O2 and Ar+5%H2. Some metals can also be grown as long as they do not require ultra high vacuum.
INL
Portugal
Kenosistec KS1000
Confocal and co-deposition of a wide range of conductive and non-conductive materials.
DC and RF magnetrons
Substrate temperature control up to 350°C
Possibility to deposit up to 11 different materials without breaking vacuum
EURONANOLAB
France
MS at EURONANOLAB - CEITEC
EURONANOLAB
France
MS at EURONANOLAB - IEMN
EURONANOLAB
France
MS at EURONANOLAB - FEMTO-ST
EURONANOLAB
France
MS at EURONANOLAB - LAAS
EURONANOLAB
France
MS at EURONANOLAB - FBK
EURONANOLAB
France
MS at EURONANOLAB - PoliFAB
EURONANOLAB
France
MS at EURONANOLAB - IMM
EURONANOLAB
France
MS at EURONANOLAB - MMI
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no
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EURONANOLAB
France
MS at EURONANOLAB - IMT
CNR-DSCTM
Italy
Magnetron sputtering