Ion implantation

Nano to Micro/Macro (Micro-fabrication)

The implanted ionic species are obtained from gas or solid precursors and directed towards a substrate that is scanned under the beam. The implant dose (amount of dopants) and energy (related to the depth they will penetrate) are the main parameters of the implantation process. The time it takes to reach a given dose (and, in this way, the range of practical doses) will depend on the current capabilities of the implanter (medium, high current). After the implant the samples need to go through a thermal process to heal the crystalline damage (amorphization) and to allow the dopant elements to take substitutional places in the crystalline network (electrical activation). Ion implantation allows dopant concentrations above the solid solubility limit. Amorphous substrates can be implanted, too, in search of a change of properties. Selective implant can be achieved by means of a masking material with a thickness enough to block 99.99% of the impinging ions at given implant conditions.      

          provided at NFFA-Europe laboratories by:
Controlled introduction of selected atoms inside a solid substrate Doping
Freeman Bernass ion implanting sources, medium current (10nA – 1mA) Materials available for implantation: B, Si, Ar, N, He, C, O, H, Ge, Ti, Al, Mg, P, As, Fe, Ni, Co, S, F, Cl
1-210 KeV simple charge Doses: 1e12at/cm2 – 1e17at/cm2
Mass spectrometer for material selection from 1 uma – 165 uma
Automatic scanning for surfaces up to 6” diameter Tilt angle capability between 0º – 15º
Up to 6” wafers Only CMOS-line samples free of contaminant metals (alkalines, noble metals) are allowed
Vacuum chamber up to 1e-7 mbar
Sample heating implant process from room T up to 500ºC
External globe box and 4-point prober