Cathodoluminescence

Electronic & Chemical & Magnetic Characterization (Luminescence spectroscopy)

The cathodoluminescence tool is a SEM with a FEG source (2-10 keV) allowing spatial resolution as low as 3 nm. Luminescence spatial resolution from 10 nm to several hundreds of nanometers depending on electron beam energy and probed material. It can be used for analysis of material properties (charge carrier recombination, electronic transition) and detection of defects or impurities. Helium to room temperature luminescence characterization of solid samples using steady-state excitation (simultaneous mapping of cathodoluminescence, EBIC and SEM) and pulsed excitation (time-resolved cathodoluminescence). Time-resolved (available only at C2N-CNRS) is detected either with a Hamamatsu streak camera, or with a Time-Correlated Single Photon Counting (TCSPC) module equipped with a PM or an APD detector. Temporal resolution down to 10 ps.

The samples are mounted on a 1 inch sample holder attached on a piezoelectric nano-positioning cryostage allowing low temperature measurements (~10K). An intra-column optical collection system coupled with a dispersive spectrometer and two array detectors permits the spectral analysis of luminescence emission from 200 nm to 1.6 µm. This system offers a way to extract spatially resolved electronic and/or optical properties of luminescent material and devices.                                                                                                                                                                                                                                                                                                                                                                                                                                                    

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          provided at NFFA-Europe laboratories by:
CEA/LETI
France
C2N-CNRS
France
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          provided by:
EURONANOLAB
France
CEA/LETI
France
Cathodoluminescence
Helium to room temperature luminescence characterization of solid samples Analysis of material properties (charge carrier recombination, electronic transition) and detection of defects or impurities
Electron gun with a beam current varying from 100pA to 20nA, focused on the sample thanks to a SEM microscope
Electron gun of energy between 2 and 10keV
Visible CCD detector: 220 -1050 nm Near infrared InGaAs array: 800 -1550 nm
Luminescence spatial resolution from 30nm to several hundreds of nanometers depending on electron beam energy and probed material SEM resolution is few nanometers
XY mapping stage range: 25mmx25mm, XY mapping stage resolution<100nm Z range: 5mm
From few mm2 to 20 mm diameter flat samples
Secondary vacuum ambient in the chamber Helium cryostat from 4 K to 500 K
Cross section view is possible, in this case sample size is limited to 2mmx2mm Sample preparation allowed: cleaving or polishing only No FIB etching (detrimental for luminescence characteristics of a lot of materials)