FIB sample preparation for TEM

Structural & Morphology Characterization (Electron and ion beam technologies)

The common FIB Workstation is a high resolution FE-SEM combined with a FIB Ga+ column plus a multi channel gas injection system: Pt, C, W and SiOx are some of the usual precursors for ion or electron induced deposition (FIBID/FEBID); and Fluorine or H2O are used for enhanced etching. It can be equipped with different detectors: Everhart-Thornley SE, In-lens SE detector, Backscattered Detector, EDX (for 2D and 3D reconstruction) or STEM among others.

The main FIB application is the site specific cross sectioning and SEM inspection on a wide variety of samples (electronics, ceramics, metallurgy, biology…) throgh its different detectors. Other current applications are 3D reconstruction and circuit editing and repair. Actually, due to its high performance and increasing number of accessories, different applications are arising continuously.

Another typical application for such systems is the preparation of lamellaes for TEM studies. The combination of Ion polishing at high and low energy (to avoid Ga contamination), a Nanomanipulator for lamellae extraction, the control of the lamellae thickness and STEM detector for quality imaging of the final lamella make this application the preferred technique in Materials Science for samples preparation for TEM analysis.

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          provided at NFFA-Europe laboratories by:
CEA/LETI
France
CSIC-CNM
Spain
INL
Portugal
EURONANOLAB
France
CEA/LETI
France
FIB dual beam
Sample preparation for X-ray tomography, large or deep cross section (100µm or above), back side deprocess of silicon
Inductively coupled plasma (ICP) source from Xenon ions
Accelerating voltage from 2kV to 30kV Maximum beam current at 30kV: 2µA
Secondary electron and secondary ion imaging Maximum field of view 1mm2
Spatial resolution of 20nm
Motorized stage XYZ, rotation and tilt from -9 to 60deg
All types of sample, maximum size of 200mm with limited stage movement
Secondary vacuum (10-7Pa)
In-situ micromanipulator In-situ and localized material deposition : Pt, SiOx
CEA/LETI
France
Plasma FIB
Sample preparation of TEM lamella, Electron tomography needle, Atom Probe needle, Cross section followed by SEM imaging
Liquid metal ion source from Gallium
Accelerating voltage from 0,5kV to 30kV
Secondary electron and secondary ion imaging Images could be generated from the ion and the SEM column Maximum field of view 1mm2
SEM resolution: 2nm FIB resolution: 5nm
Motorized stage XYZ, rotation and tilt from -9 to 60 deg
All types of sample, maximum XY size: 6.5cm, maximum height: 5mm
Secondary vacuum (10-7Pa)
In-situ micromanipulator In-situ and localized material deposition : Pt, SiOx, C, W