Synchrotron-based lithography

DXRL Deep X-Ray Lithography
DXRL allows controlled irradiation of samples with high energy X-rays (2–20 keV). It offers high penetration depth, min lateral resolution of 200 nm, high aspect ratio, vertical sidewalls, optical surface quality. It is used to produce plastic microdevices, or of other materials following the LIGA process (lithography, electrodeposition, moulding).
EUV-IL Extreme Ultra Violet - Interference lithography
EUV interference lithography is a powerful tool both for scientific and industrial research. A spatially filtered beam from the synchrotron is projected on a mask through multiple gratings. The diffracted beams interfere on a wafer coated with a photosensitive polymer. Periodic patterns down to single digit resolution can be achieved.