The common FIB Workstation is a high resolution FE-SEM combined with a FIB Ga+ column plus a multi channel gas injection system: Pt, C, W, Co, Au and SiOx are some of the usual precursors for ion or electron induced deposition (FIBID/FEBID); and Fluorine, Iodine or H2O are used for enhanced etching. It can be equipped with different detectors: Everhart-Thornley SE, In-lens SE detector, Backscattered Detector, EDX or STEM among others. Such systems are usually equipped with several nanomanipulators which allow both manipulation and electrical contacting in-situ, and an electron beam-blanker and nanolithography capabilities are also an option.
The main application areas are Nanofabrication and prototyping with nanometric resolution, FIB site specific cross sectioning and SEM inspection on a wide variety of samples (electronics, ceramics, metallurgy, biology…), TEM lamellae preparation, circuit editing and electrical and mechanical inspection in vacuum conditions, nanolithography both with ions or electrons... Actually, due to its high performance and accessories different applications are arising continuously.
WARNING: Access available only to CNR-IOM, but not for TEM sample preparation
FIB - Zeiss 1560XB Cross Beam (N7)
Ga+ ion emitter, 1pA up to 40nA, and Schottky type electrons emitter, currents up to 10nA
For deposition, P, C and TEOS available, and XeF2 and H2O for enhanced etching
Plasma FIB V-Ion FEI
Sample preparation for X-ray tomography, large or deep cross section (100µm or above), back side deprocess of silicon
Strata 400 FEI
Sample preparation of TEM lamella, Electron tomography needle, Atom Probe needle, Cross section followed by SEM imaging
Secondary electron and secondary ion imaging
Images could be generated from the ion and the SEM column
Maximum field of view 1mm2