RIE
Reactive Ion Etching

Lithography & Patterning Installation 1
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RIE is used to etch various materials under vacuum in the presence of reactive ions. Typically a wide range of materials can be etched by use of various gas mixtures containing fluorine, chlorine, oxygen and other elements. An RF source accelerates stray electrons between a pair of plates in the presence of a low-pressure gas and reactive ions and free radicals (like monoatomic fluorine) are created. The surface to be etched is bombarded by the reactive ions and the material is etched by forming a volatile component. The etching mechanism can either be physical (sputtering mechanism) where the target material is mechanically sputtered away by the accelerated ions, chemical where the ions react with the target material to form a volatile compound, or both. The selection of the etch parameters (gas mixture, gas flow, pressure, RF power and bias) can give control over the anisotropy, selectivity, etching rate, and surface roughness by controlling this etching mechanism.

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          provided at NFFA-Europe laboratories by:
Italy
France
Spain
Sweden
Switzerland
LU
Sweden

Etcher RIE Trion Sirus T2 Plus

Reactive ion etching (RIE) for etching Si, SiO2, Si3N4, W, Mo and polymers

Plasma excitation with RF (13.56 MHz)

Gases available: SF6, O2, Ar, CF4, CHF3

RF power up to 600 W, room temperature operation only

End point detector Intellevation LEP400

Up to 8 inch wafer size samples

Room temperature operation only

Laser interferometric dry etch depth monitor

Process chamber base pressure ~10-3 Torr

Process pressure 10 - 500 mTorr

LU
Sweden

Etcher ICP-RIE Plasmalab System 100

Inductively coupled plasma (ICP) reactive ion etching (RIE) for etching almost all different types of materials, including III-V semiconductors, silicon, dielectrics and metals

Only glasses, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Cd, Pb, Zn) and silicones are not allowed

Plasma excitation with ICP (13.56 MHz) and RF (13.56 MHz)

Gases available: SF6, O2, Ar, H2, Cl2, CF4, C4F8

ICP power up to 2 kW and RF power up to 300 W, room temperature operation only

Up to 4 inch wafer size samples

Room temperature operation only

Process chamber base pressure ~10-6 - 10-7 Torr

Process pressure 5 - 90 mTorr

PSI
Switzerland

Oxford plasmalab Systems 100 @ Laboratory for Micro and Nanotechnology

Reactive Ion Etching

Two RIE-ICP systems one dedicated to the Bosch process (Au-free) and one for general purpose etches (F-based)

Typical gases C4F8, CF4, SF6, O2, Ar

Up to 4" wafers

High Vacuum, LN2 cooled stage

 ICP

Relevant clean room tools, there is also a Cl-based plasma etching tool dedicated to Cr etching