Ion implantation

Lithography & Patterning Installation 1
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The implanted ionic species are obtained from gas or solid precursors and directed towards a substrate that is scanned under the beam. The implant dose (amount of dopants) and energy (related to the depth they will penetrate) are the main parameters of the implantation process. The time it takes to reach a given dose (and, in this way, the range of practical doses) will depend on the current capabilities of the implanter (medium, high current). After the implant the samples need to go through a thermal process to heal the crystalline damage (amorphization) and to allow the dopant elements to take substitutional places in the crystalline network (electrical activation). Ion implantation allows dopant concentrations above the solid solubility limit. Amorphous substrates can be implanted, too, in search of a change of properties. Selective implant can be achieved by means of a masking material with a thickness enough to block 99.99% of the impinging ions at given implant conditions.

          provided at NFFA-Europe laboratories by:


Controlled introduction of selected atoms inside a solid substrate


Freeman Bernass ion implanting sources, medium current (10nA – 1mA)

Materials available for implantation: B, Si, Ar, N, He, C, O, H, Ge, Ti, Al, Mg, P, As, Fe, Ni, Co, S, F, Cl

1-210 KeV simple charge

Doses: 1e12at/cm2 – 1e17at/cm2

Mass spectrometer for material selection from 1 uma – 165 uma

Automatic scanning for surfaces up to 6” diameter

Tilt angle capability between 0º – 15º

Up to 6” wafers

Only CMOS-line samples free of contaminant metals (alkalines, noble metals) are allowed

Vacuum chamber up to 1e-7 mbar

Sample heating implant process from room T up to 500ºC

External globe box and 4-point prober