CBE
Chemical Beam Epitaxy

Growth & Synthesis Installation 2
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With this system we have successively grown gold particle seeded InAs nanowires on (111)B InAs substrates and are able to grow InP barriers and graded InAsP sections in the InAs wires in a controlled manner with respect to thickness, separation and composition. Reflection high-energy electron diffraction (RHEED) is used for in-situ monitoring of surface reconstruction and 3D nanowire growth. The III-V materials which can be grown: GaAs, InAs, InSb, InP and their combinations.

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Sweden
LU
Sweden

III-V materials CBE

Chemical Beam Epitaxy (MOMBE) of III-V materials

Metal organic precursors

III-V materials: GaAs, InAs, InSb, InP and their combinations. Gold particle seeded InAs nanowires on (111)B InAs substrates and InP barriers and graded InAsP sections in InAs wires, in a controlled manner with respect to thickness, separation and composition

Reflection high-energy electron diffraction (RHEED) is used for in-situ monitoring of surface reconstruction and 3D nanowire growth

The choice of sources requires a vent/run injection system and results in a higher gas load and growth pressure, typically, in the low 10-5 mbar range, as opposed to 10-7 mbar or lower for the MBE